onsemi Discrete Semiconductor Products BD135G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 200950-BD135G Category: Discrete Semiconductor Products Family: Transistors - Bipolar (BJT) - Single Packaging: Bulk Mounting Style: Through Hole Package: TO-225AA, TO-126-3 Manufacturer Device Package: TO-225AA Power - Max: 1.25W Voltage - Collector Emitter Breakdown (Max): 45V Current - Collector (Ic) (Max): 1.5A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 200950-BD135G Category: Discrete Semiconductor Products Family: Transistors - Bipolar (BJT) - Single Packaging: Bulk Mounting Style: Through Hole Package: TO-225AA, TO-126-3 Manufacturer Device Package: TO-225AA Power - Max: 1.25W Voltage - Collector Emitter Breakdown (Max): 45V Current - Collector (Ic) (Max): 1.5A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
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Discrete Semiconductor Products - 200950-BD135G - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products
200950-BD135G
Discrete Semiconductor Products 200950-BD135G
Manufacturer: ON Semiconductor Win Source Part Number: 200950-BD135G Category: Discrete Semiconductor Products Family: Transistors - Bipolar (BJT) - Single Packaging: Bulk Mounting Style: Through Hole Package: TO-225AA, TO-126-3 Manufacturer Device Package: TO-225AA Power - Max: 1.25W Voltage - Collector Emitter Breakdown (Max): 45V Current - Collector (Ic) (Max): 1.5A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: ON Semiconductor
Win Source Part Number: 200950-BD135G
Category: Discrete Semiconductor Products
Family: Transistors - Bipolar (BJT) - Single
Packaging: Bulk
Mounting Style: Through Hole
Package: TO-225AA, TO-126-3
Manufacturer Device Package: TO-225AA
Power - Max: 1.25W
Voltage - Collector Emitter Breakdown (Max): 45V
Current - Collector (Ic) (Max): 1.5A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Uncategorized Products
Product Number 200950-BD135G
Product Name Discrete Semiconductor Products
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