onsemi Single Bipolar Transistors BCX18LT1

The BCX18LT1G is a PNP bipolar transistor in a SOT-23 (TO-236) package measuring 2.90×1.30×1.00 mm, rated for a maximum collector-emitter voltage of 25 V and continuous collector current of 500 mA. It has a DC current gain (hFE) of 70 to 600 at IC = 100 mA and VCE = 1 V, with a collector-emitter saturation voltage of 0.62 V at IC = 500 mA and IB = 50 mA. The device is Pb-free, halogen-free, RoHS compliant, and AEC-Q101 qualified for automotive applications. Total device dissipation is 225 mW on FR-5 board and 300 mW on alumina substrate, with a junction temperature range of -55°C to +150°C.