onsemi Single Bipolar Transistors BCW60C

NPN silicon transistor for general-purpose applications in SOT-23 surface-mount package, rated for 32V collector-emitter voltage, 100mA collector current, and 350mW power dissipation. Current gain (hFE) ranges from 250 to 460 at VCE=5V and IC=10μA, and from 90 to 100 at VCE=1V and IC=50mA. Collector-emitter saturation voltage is 0.55V at IC=50mA and IB=1.25mA. Current gain bandwidth product is 125MHz. Operates within storage temperature range of -55°C to 150°C.