The BC857BDW1T1G is a PNP dual transistor in the SOT-363/SC-88 package, designed for general purpose amplifier applications. It has a collector-emitter voltage rating of -45 V, a continuous collector current of -100 mA, and a total device power dissipation of 380 mW. The device is AEC-Q101 qualified and Pb-free, halogen-free, and RoHS compliant. Its DC current gain (hFE) ranges from 220 to 475 at IC = -2.0 mA and VCE = -5.0 V, and the junction temperature range is -55 to +150 °C.
TRANSISTOR, PNP, -45V, 0.1A, SOT-363-6; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; DC Collector Current:100mA; Power Dissipation Pd:380mW; DC Current Gain hFE:150hFE; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 25AC6325 |
| Product Name | Transistor, Pnp, -45V, 0.1A, Sot-363-6; Transistor Polarity Onsemi |
| Transistor Type | Transistor, Pnp, -45V, 0.1A, Sot-363-6; Transistor Polarity Onsemi |
