onsemi Transistor Polarity Onsemi BC847BTT1G.

The BC847BTT1G is an NPN silicon transistor designed for general purpose amplifier applications in surface mount circuits. It is housed in the SC−75/SOT−416 package, measuring 1.60 mm in height and 1.00 mm pitch between pins. The device supports a maximum collector−emitter voltage of 45 V, continuous collector current of 100 mA, and power dissipation of 300 mW on a 1.0 × 1.0 inch FR−4 pad. Thermal resistance is 400 °C/W junction-to-ambient. The transistor has a current−gain bandwidth product of 100 MHz and collector−emitter saturation voltage up to 0.6 V at 100 mA collector current. It is Pb−free, AEC−Q101 qualified, and PPAP capable.