onsemi 100 mA 45 V Bipolar Transistor BC847BPDW1T1

Description
100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: BC847BPDW1T1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100 mA, 45 V. Search-friendly keywords include transistor, BJT, switching, amplification, 100 mA, 45 V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BC847BPDW1T1 can be used for catalog matching and distributor lookup.
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Description
100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: BC847BPDW1T1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100 mA, 45 V. Search-friendly keywords include transistor, BJT, switching, amplification, 100 mA, 45 V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BC847BPDW1T1 can be used for catalog matching and distributor lookup.
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Datasheet
Datasheet Summary
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The BC847BPDW1T1 is a dual NPN and PNP bipolar transistor in a SOT-363/SC-88 package, designed for general-purpose amplifier and switching applications. The device has a collector-emitter voltage rating of 45 V and a continuous collector current of 100 mA. It includes complementary transistors with a DC current gain (hFE) ranging from 200 to 475 at IC = 2.0 mA and VCE = 5.0 V, and a current-gain bandwidth product of 100 MHz. The package dimensions are 2.00 mm x 1.25 mm with a 0.65 mm pitch. The part is Pb-free and meets RoHS standards.

Datasheet Summary
Powered by GS/AI

The BC847BPDW1T1 is a dual NPN and PNP bipolar transistor in a SOT-363/SC-88 package, designed for general-purpose amplifier and switching applications. The device has a collector-emitter voltage rating of 45 V and a continuous collector current of 100 mA. It includes complementary transistors with a DC current gain (hFE) ranging from 200 to 475 at IC = 2.0 mA and VCE = 5.0 V, and a current-gain bandwidth product of 100 MHz. The package dimensions are 2.00 mm x 1.25 mm with a 0.65 mm pitch. The part is Pb-free and meets RoHS standards.

Suppliers

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Singapore, Singapore
100 mA 45 V Bipolar Transistor
276-BC847BPDW1T1
100 mA 45 V Bipolar Transistor 276-BC847BPDW1T1
100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: BC847BPDW1T1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100 mA, 45 V. Search-friendly keywords include transistor, BJT, switching, amplification, 100 mA, 45 V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BC847BPDW1T1 can be used for catalog matching and distributor lookup.

100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL Product overview: BC847BPDW1T1 from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100 mA, 45 V. Search-friendly keywords include transistor, BJT, switching, amplification, 100 mA, 45 V, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BC847BPDW1T1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD.
Product Category Bipolar RF Transistors
Product Number 276-BC847BPDW1T1
Product Name 100 mA 45 V Bipolar Transistor
Polarity NPN; PNP
IC(max) 100 milliamps
VCBO 50 volts
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