NPN/PNP BJT Transistor, 65V, 100mA, 100MHz, SOT-363-6 Product overview: BC846BPDW1T1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 65V, 100mA, 100MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 65V, 100mA, 100MHz, Bipolar Transistor, Bipolar Transistor Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 277-BC846BPDW1T1G can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor Array NPN, PNP 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
Bipolar (BJT) Transistor Array NPN, PNP 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
Bipolar (BJT) Transistor Array NPN, PNP 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363
NPN PNP Bipolar Transistor
Bipolar Transistors - BJT 100mA 80V Dual Complementary
TRAN NPN/PNP 65V 0.1A SC88/SC70
TRAN NPN/PNP 65V 0.1A SC88/SC70
TRANSISTOR, BIPOL, NPN/PNP, 65V, SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No. of RoHS Compliant: Yes
TRANSISTOR, BIPOL, NPN/PNP, 65V, SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:65V; Power Dissipation Pd:380mW; DC Collector Current:100mA; DC Current Gain hFE:200hFE; Transistor Case Style:SOT-363; No. of RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Rochester Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | 277-BC846BPDW1T1G | BC846BPDW1T1GOSTR-ND | BC846BPDW1T1G | BC846BPDW1T1G | BC846BPDW1T1G | BC846BPDW1T1G | 81Y5863 |
| Product Name | 65V 100mA 100MHz Bipolar Transistor | Bipolar Transistor Arrays | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistor Arrays | Transistor, Bipol, Npn/pnp, 65V, Sot363; Transistor Polarity Onsemi | |
| Polarity | NPN; PNP | NPN; PNP | NPN; PNP | NPN, PNP; NPN; PNP | NPN; PNP | ||
| IC(max) | 100 milliamps | 100 milliamps | 100 milliamps | ||||
| VCEO | 65 volts | 65 volts | 65 volts | ||||
| VCBO | 80 volts | ||||||
| fT | 100 MHz |
