onsemi Single Bipolar Transistors BC846AWT1

NPN silicon bipolar transistor designed for general purpose amplifier applications, housed in the SC-70/SOT-323 surface mount package. It has a collector-emitter voltage rating of 65 V, collector-base voltage of 80 V, emitter-base voltage of 6.0 V, and continuous collector current of 100 mA. Total device dissipation is 200 mW with a thermal resistance of 620 °C/W. Junction and storage temperature range is -55 °C to +150 °C. The device is RoHS compliant, Pb-free, halogen-free/BFR-free, AEC-Q101 qualified, and PPAP capable. DC current gain (hFE) ranges from 110 to 220 at IC = 2.0 mA and VCE = 5.0 V. Current-gain bandwidth product is 100 MHz, collector-emitter saturation voltage is up to 0.25 V at IC = 10 mA and IB = 0.5 mA, and output capacitance is 4.5 pF at VCB = 10 V.