onsemi Single Bipolar Transistors BC547BZL1G

Description
Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 625mW Through Hole TO-92 (TO-226)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - BC547BZL1GOSTB-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC547BZL1GOSTB-ND
Single Bipolar Transistors BC547BZL1GOSTB-ND
Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 625mW Through Hole TO-92 (TO-226)

Bipolar (BJT) Transistor NPN 45V 100mA 300MHz 625mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
Singapore, Singapore
45V 100mA 300MHz Bipolar Transistor
276-BC547BZL1G
45V 100mA 300MHz Bipolar Transistor 276-BC547BZL1G
NPN BJT 45V 100mA 300MHz TO-92 Transistor Product overview: BC547BZL1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 45V, 100mA, 300MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 45V, 100mA, 300MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BC547BZL1G can be used for catalog matching and distributor lookup.

NPN BJT 45V 100mA 300MHz TO-92 Transistor Product overview: BC547BZL1G from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 45V, 100mA, 300MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 45V, 100mA, 300MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-BC547BZL1G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - BC547BZL1G - Rochester Electronics
Newburyport, MA, United States
NPN Bipolar Transistor

NPN Bipolar Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - BC547BZL1G - 112167-BC547BZL1G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC547BZL1G
112167-BC547BZL1G
TRANSISTORS - Transistors (BJT) - Single - BC547BZL1G 112167-BC547BZL1G
Manufacturer: ON Semiconductor Win Source Part Number: 112167-BC547BZL1G Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 300MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 600mV @ 5mA, 100mA Collector Cut-off Current(Max): 15nA Typical Gain (hFE) (Min): 200 @ 2mA, 5V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance Application Field: Used in Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 112167-BC547BZL1G
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 300MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 600mV @ 5mA, 100mA
Collector Cut-off Current(Max): 15nA
Typical Gain (hFE) (Min): 200 @ 2mA, 5V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance
Application Field: Used in Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC547BZL1G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC547BZL1G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC547BZL1G
TRANS NPN 45V 0.1A TO92

TRANS NPN 45V 0.1A TO92

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number BC547BZL1GOSTB-ND 276-BC547BZL1G BC547BZL1G 112167-BC547BZL1G BC547BZL1G
Product Name Single Bipolar Transistors 45V 100mA 300MHz Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - BC547BZL1G Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN NPN; NPN
Package Type TO-92; TO-226-3, TO-92-3 Long Body, Formed Leads TO-92; TO-92 (TO-226) 5.33mm Body Height TO-92; SOT3; TO-92-3
IC(max) 100 milliamps 100 milliamps
VCEO 45 volts 45 volts
VCBO 50 volts
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