onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - ATP203-TL-H ATP203-TL-H

Description
Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
  • ATP203-TL-H - Rochester Electronics
    Rochester Electronics
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - ATP203-TL-H - 1020400-ATP203-TL-H - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ATP203-TL-H - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
- ATP203-TL-H - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
ATP203-TL-H
ATP203-TL-H
Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ATP203-TL-H - 1020400-ATP203-TL-H - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ATP203-TL-H
1020400-ATP203-TL-H
TRANSISTORS - Transistors - FETs, MOSFETs - RF - ATP203-TL-H 1020400-ATP203-TL-H
Manufacturer: ON Semiconductor Win Source Part Number: 1020400-ATP203-TL-H Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: ATPAK Dimension: ATPAK (2 leads+tab) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 75A (Ta) Max Gate Charge: 44nC @ 10V Max Input Capacitance: 2750pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 38A, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1020400-ATP203-TL-H
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: ATPAK
Dimension: ATPAK (2 leads+tab)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 75A (Ta)
Max Gate Charge: 44nC @ 10V
Max Input Capacitance: 2750pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.2 mOhm @ 38A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - ATP203-TL-H - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
ATP203-TL-H
Discrete Semiconductor Products - Transistors - FETs, MOSFETs ATP203-TL-H
MOSFET N-CH 30V 75A ATPAK

MOSFET N-CH 30V 75A ATPAK

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number ATP203-TL-H 1020400-ATP203-TL-H ATP203-TL-H
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - ATP203-TL-H Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type D2PAK SOT3; ATPAK ATPAK (2 Leads+Tab)
V(BR)DSS 30 volts
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