The 4N36M series consists of 6-pin dual-in-line package phototransistor optocouplers with a gallium arsenide infrared LED and silicon phototransistor. The package measures 8.51 mm by 6.35 mm with a 2.54 mm pitch. It has a current transfer ratio of at least 100% at 10 mA input and 10 V collector-emitter voltage. The device supports a maximum working insulation voltage of 850 V peak and meets UL1577 (4,170 VAC for 1 minute) and DIN EN/IEC60747-5-5 safety standards. The maximum junction temperature is 125 °C, and the isolation resistance exceeds 10^11 ohms at 500 VDC. The case temperature limit is 175 °C, and the output power dissipation is 800 mW. The 4N36VM variant includes the DIN EN/IEC60747-5-5 option with extended lead spacing of 10 mm clearance.
6-Pin DIP Package Phototransistor Output Optocoupler, MDIP 6L, 1000-BULK Product overview: 4N36VM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include DIP. Search-friendly keywords include transistor, BJT, switching, amplification, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N36VM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N36VM |
| Product Name | DIP Bipolar Transistor |
