The 4N36 is a general purpose 6-pin phototransistor optocoupler with a gallium arsenide infrared LED driving a silicon phototransistor in a dual in-line package. It features an input forward current rating of 60 mA for the -M white package variant, an input-output isolation voltage of 5300 Vac(rms) for the black package, and a collector-emitter breakdown voltage of 30 V. The device is UL and VDE recognized, with a storage temperature range of -55°C to +150°C and an operating temperature range of -55°C to +100°C. The 4N36TVM is a variant with a trailing ordering code consistent with the series described.
Phototransistor Optocoupler, 5.3kV Isolation, 6-Pin DIP, 60mA Product overview: 4N36TVM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3kV, 60mA, DIP. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3kV, 60mA, DIP, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N36TVM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N36TVM |
| Product Name | 5.3kV 60mA DIP Bipolar Transistor |
| PD | 150 milliwatts |
