The 4N36TM is a six-pin phototransistor optocoupler featuring a gallium arsenide infrared LED and a silicon phototransistor in a dual in-line package. It is available in a white package with a -M suffix and includes VDE certification (option V), with a 0.4" lead spacing (option W). The device supports an input forward current up to 100 mA (non-M) or 60 mA (-M), a collector-emitter voltage of 30 V, and an isolation voltage of 7500 Vac (pk) for the white package. It meets UL and VDE safety standards (File # E90700 and #94766) and has a current transfer ratio of at least 40% at 10 mA input current and 10 V collector-emitter voltage. Operating temperature ranges from -55°C to +100°C, with a storage temperature from -55°C to +150°C.
Transistor Output Optocouplers Optocoupler Phototransistor Product overview: 4N36TM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N36TM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N36TM |
| Product Name | Bipolar Transistor |
| PD | 150 milliwatts |
