The 4N29, 4N30, 4N31, 4N32, and 4N33 are 6-pin photodarlington optocouplers with a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. They are packaged in a standard 6-pin DIP and operate over a temperature range of -55°C to +100°C. The devices provide an input-output isolation voltage of 5300 Vac(rms) and an isolation resistance of 10¹¹ Ω at 500 VDC. The collector-emitter breakdown voltage is 30 V, and the continuous collector current is 150 mA. The current transfer ratio ranges from 5% to 50% depending on the variant, with a turn-on time up to 100 µs and a bandwidth of 30 kHz. The emitter forward voltage is 1.5 V at 10 mA. The devices meet JEDEC Registered Specifications.
OPTOISO 5.3KV DARL W/BASE 6DIP Product overview: 4N30300 from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5.3KV. Search-friendly keywords include transistor, BJT, switching, amplification, 5.3KV, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N30300 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N30300 |
| Product Name | 5.3KV Bipolar Transistor |
| Package Type | Tube/Rail |
