The 4N29M is a 6-pin DIP general-purpose photodarlington optocoupler consisting of a gallium arsenide infrared LED optically coupled to a silicon photodarlington transistor. It has a maximum input current of 80 mA, a collector-emitter breakdown voltage of 30 V, and a collector current rating of 150 mA. The device meets UL1577 with 4,170 VAC RMS isolation for 1 minute and complies with DIN-EN/IEC60747-5-5 for 850 V peak working insulation voltage. External creepage and clearance are both at least 7 mm, with insulation thickness of at least 0.5 mm. Operating temperature ranges from -40 to +100 °C, and storage temperature ranges from -40 to +125 °C. The current transfer ratio is specified as 10 to 100 mA (%) at 10 mA input current.
GENERAL PURPOSE PHOTODARLINGTON Product overview: 4N29M from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N29M can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N29M |
| Product Name | Bipolar Transistor |
| Package Type | Bulk |
| Packing Method | Bulk |
| IC(max) | 150 milliamps |
