The 4N26 is a general purpose 6-pin phototransistor optocoupler consisting of a gallium arsenide infrared emitting diode and a silicon phototransistor in a dual in-line package. It has a collector-emitter voltage rating of 30 V, a forward input current of 100 mA, and an input-output isolation voltage of 5300 Vac(rms) for the black package. The device meets UL and VDE recognition standards. Operating temperature ranges from -55 °C to +100 °C, with a total power dissipation of 250 mW at 25 °C.
Optocoupler DC-IN 1-CH Transistor With Base DC-OUT 6-Pin PDIP White Product overview: 4N26TM from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N26TM can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N26TM |
| Product Name | Bipolar Transistor |
| PD | 150 milliwatts |
