The 4N25SD is a 6-pin dual in-line phototransistor optocoupler with a surface mount leadform and tape and reel packaging, consisting of a gallium arsenide infrared emitter and a silicon phototransistor. It operates from -55°C to +100°C and supports a Collector-Emitter voltage of up to 30 V. The device meets UL and VDE isolation standards, with an isolation voltage of 5300 Vac (rms) for the black package variant; the white package (-M) variant, which this part does not use, offers 7500 Vac (pk). The surface mount version employs a 0.4" lead spacing, with dimensions matching the black package through-hole form factor. Current Transfer Ratio (CTR) ranges from 10% to 20% at 10 mA forward current and 10 V Collector-Emitter voltage. It adheres to UL 94 V-0 flammability rating and RoHS compliance.
Transistor Output Optocouplers Optocoupler SM-DIP6 Phototransistor Product overview: 4N25SD from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-4N25SD can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-4N25SD |
| Product Name | Bipolar Transistor |
| PD | 250 milliwatts |
