N-channel junction silicon FET designed for video camera first-stage applications, housed in an ultrasmall CP package with dimensions of 5.0 × 5.1 × 2.9 mm. It features an ultralow noise figure of 1.5 dB, a forward transfer admittance of 20 to 30 mS, and a reverse transfer capacitance of 2.8 pF. Maximum ratings include a drain-to-source voltage of 15 V, a drain current of 50 mA, and a power dissipation of 200 mW. The part is classified by IDSS with a range of 16.0 to 24.0 mA for the 6 grade variant. Junction temperature rating is 125°C and storage temperature ranges from -55°C to +125°C.
Pnp/NPN Epitaxial Planar Silicon Transistor
| Rochester Electronics | |
|---|---|
| Product Category | RF Transistors |
| Product Number | 2SK443-6-TB-E |
| Polarity | NPN; PNP |
