3.5A, 600V, 3.25ohm, N-Channel Power MOSFET, TO-220AB
Manufacturer: ON Semiconductor
Win Source Part Number: 075655-2SK4197LS
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FI(LS)
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 3.5A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 260pF @ 30V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.25 Ohm @ 1.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
| Rochester Electronics | Win Source Electronics | |
|---|---|---|
| Product Category | Power MOSFET | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2SK4197LS | 075655-2SK4197LS |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4197LS | |
| Polarity | N-Channel | N-Channel; N-Channel |
| rDS(on) | 3.25 ohms | |
| Package Type | TO-220; TO-220AB | TO-220; SOT3; TO-220FI(LS) |
| V(BR)DSS | 600 volts |
