onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4197FS 2SK4197FS

Description
Manufacturer: ON Semiconductor Win Source Part Number: 1004766-2SK4197FS Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 3.3A (Tc) Max Gate Charge: 11nC @ 10V Max Input Capacitance: 260pF @ 30V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.25 Ohm @ 1.8A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4197FS - 1004766-2SK4197FS - Win Source Electronics
    Win Source Electronics
  • 2SK4197FS - Rochester Electronics
    Rochester Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK4197FS - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 600V 3.3A TO-220F-3 - 598-2SK4197FS - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 1004766-2SK4197FS Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 3.3A (Tc) Max Gate Charge: 11nC @ 10V Max Input Capacitance: 260pF @ 30V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.25 Ohm @ 1.8A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4197FS - 1004766-2SK4197FS - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4197FS
1004766-2SK4197FS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4197FS 1004766-2SK4197FS
Manufacturer: ON Semiconductor Win Source Part Number: 1004766-2SK4197FS Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2W (Ta), 28W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 3.3A (Tc) Max Gate Charge: 11nC @ 10V Max Input Capacitance: 260pF @ 30V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 3.25 Ohm @ 1.8A, 10V Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1004766-2SK4197FS
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2W (Ta), 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 3.3A (Tc)
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 260pF @ 30V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 3.25 Ohm @ 1.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
N-Channel 600V 3.5A MOSFET Transistor
278-2SK4197FS
N-Channel 600V 3.5A MOSFET Transistor 278-2SK4197FS
N-Channel Power MOSFET, 600V, 3.5A, 3.25Ω, TO-220F-3FS N-Channel Power MOSFET, 600V, 3.5A, 3.25Ohm, TO-220F-3FS, TO-220F-3FS, 50-TUBE Product overview: 2SK4197FS from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 3.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 3.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SK4197FS can be used for catalog matching and distributor lookup.

N-Channel Power MOSFET, 600V, 3.5A, 3.25Ω, TO-220F-3FS N-Channel Power MOSFET, 600V, 3.5A, 3.25Ohm, TO-220F-3FS, TO-220F-3FS, 50-TUBE Product overview: 2SK4197FS from onsemi is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 600V, 3.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 3.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-2SK4197FS can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
- 2SK4197FS - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
2SK4197FS
2SK4197FS
Power Field-Effect Transistor, N-Channel, MOSFET

Power Field-Effect Transistor, N-Channel, MOSFET

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK4197FS - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK4197FS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK4197FS
MOSFET N-CH 600V 3.3A TO220-3

MOSFET N-CH 600V 3.3A TO220-3

Supplier's Site
MOSFET N-CH 600V 3.3A TO-220F-3 - 598-2SK4197FS - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 600V 3.3A TO-220F-3
598-2SK4197FS
MOSFET N-CH 600V 3.3A TO-220F-3 598-2SK4197FS
MOSFET N-CH 600V 3.3A TO-220F-3

MOSFET N-CH 600V 3.3A TO-220F-3

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1004766-2SK4197FS 278-2SK4197FS 2SK4197FS 2SK4197FS 598-2SK4197FS
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4197FS N-Channel 600V 3.5A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 600V 3.3A TO-220F-3
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 2000 to 28000 milliwatts 2000 milliwatts
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