Win Source Part Number: 973332-2SK4099LS
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 100
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Tc)
Rds On (Max) @ Id, Vgs: 940mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 2W (Ta), 35W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FI(LS)
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 30 V
Vgs (Max): ±30V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 56 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 2156-2SK4099LS-ON,ON
Base Product Number: 2SK4099
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
8.5A, 600V, 0.94ohm, N-Channel Power MOSFET, TO-220AB
MOSFET N-CH 600V 6.9A TO220FI
| Win Source Electronics | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | RF Transistors |
| Product Number | 973332-2SK4099LS | 2SK4099LS | 2SK4099LS |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | |
| Polarity | N-Channel | N-Channel | |
| PD | 2000 to 35000 milliwatts | ||
| TJ | 150 C (302 F) |