onsemi Single FETs, MOSFETs 2SK4065-DL-1E

Description
N-Channel 75V 100A (Ta) 1.65W (Ta), 90W (Tc) Surface Mount TO-263-2
Request a Quote Datasheet
Description
N-Channel 75V 100A (Ta) 1.65W (Ta), 90W (Tc) Surface Mount TO-263-2
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 2SK4065-DL-1E-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
2SK4065-DL-1E-ND
Single FETs, MOSFETs 2SK4065-DL-1E-ND
N-Channel 75V 100A (Ta) 1.65W (Ta), 90W (Tc) Surface Mount TO-263-2

N-Channel 75V 100A (Ta) 1.65W (Ta), 90W (Tc) Surface Mount TO-263-2

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4065-DL-1E - 1004753-2SK4065-DL-1E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4065-DL-1E
1004753-2SK4065-DL-1E
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4065-DL-1E 1004753-2SK4065-DL-1E
Manufacturer: ON Semiconductor Win Source Part Number: 1004753-2SK4065-DL-1 E Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.65W (Ta), 90W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Temperature Range - Operating: 150°C (TJ) Case / Package: TO-263-2 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 100A (Ta) Max Gate Charge: 220nC @ 10V Max Input Capacitance: 12200pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 1004753-2SK4065-DL-1E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.65W (Ta), 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-263-2
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 100A (Ta)
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 12200pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
 - 2SK4065-DL-1E - Rochester Electronics
Newburyport, MA, United States
N-Channel Power MOSFET, 75V, 100A, TO-263-2L

N-Channel Power MOSFET, 75V, 100A, TO-263-2L

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK4065-DL-1E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK4065-DL-1E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK4065-DL-1E
MOSFET N-CH 75V 100A TO263-2

MOSFET N-CH 75V 100A TO263-2

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Power MOSFET RF Transistors
Product Number 2SK4065-DL-1E-ND 1004753-2SK4065-DL-1E 2SK4065-DL-1E 2SK4065-DL-1E
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK4065-DL-1E Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; TO-263-2 D2PAK TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 75 volts
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