onsemi Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 2SK3816-DL-1E

Power Field-Effect Transistor, N-Channel, MOSFET

Win Source Part Number: 1037809-2SK3816-DL-1E
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tape & Reel (TR)
Standard Package: 800
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 20 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): 2SK3816-DL-1E2SK3816DL1E;
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: 2156-2SK3816-DL-1E,ONSONS2SK3816-DL-1E
Base Product Number: 2SK3816
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V

N-Channel 60V 40A (Ta) 1.65W (Ta), 50W (Tc) Surface Mount TO-263-2