onsemi 2SK3486-TD-E

N-Channel Silicon MOSFET for general-purpose switching applications, housed in a TO-252 package with a case temperature rating up to 150°C. It has a drain-to-source voltage rating of 20 V, continuous drain current of 8 A, and pulse drain current of 32 A. RDS(on) is 43 mΩ maximum at 4 A and 4 V gate drive, or 56 mΩ maximum at 2 A and 2.5 V gate drive. The device supports 2.5 V logic-level drive, with total gate charge of 7.6 nC and switching times of 13 ns turn-on delay, 28 ns rise time, 53 ns turn-off delay, and 65 ns fall time. It meets AEC-Q200 qualifications and is RoHS compliant.