N-channel silicon MOSFET for general-purpose switching, packaged in TO-220FI(LS), with an 800 V drain-to-source voltage rating, 2.5 A continuous drain current, and a maximum RDS(on) of 4.8 Ω at 15 V gate drive. Features low gate charge of 15 nC and ultrahigh-speed switching with rise and fall times of 15 ns and 23 ns respectively. Operates with a channel temperature up to 150°C and is rated for storage temperatures from -55°C to +150°C.
2.5A, 800V, 4.8ohm, N-Channel Power MOSFET
| Rochester Electronics | |
|---|---|
| Product Category | Power MOSFET |
| Product Number | 2SK2632LS-MG5 |
| Polarity | N-Channel |