onsemi 2SK2632LS-MG5

Description
2.5A, 800V, 4.8ohm, N-Channel Power MOSFET
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Description
2.5A, 800V, 4.8ohm, N-Channel Power MOSFET
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Datasheet
Datasheet Summary
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N-channel silicon MOSFET for general-purpose switching, packaged in TO-220FI(LS), with an 800 V drain-to-source voltage rating, 2.5 A continuous drain current, and a maximum RDS(on) of 4.8 Ω at 15 V gate drive. Features low gate charge of 15 nC and ultrahigh-speed switching with rise and fall times of 15 ns and 23 ns respectively. Operates with a channel temperature up to 150°C and is rated for storage temperatures from -55°C to +150°C.

Datasheet Summary
Powered by GS/AI

N-channel silicon MOSFET for general-purpose switching, packaged in TO-220FI(LS), with an 800 V drain-to-source voltage rating, 2.5 A continuous drain current, and a maximum RDS(on) of 4.8 Ω at 15 V gate drive. Features low gate charge of 15 nC and ultrahigh-speed switching with rise and fall times of 15 ns and 23 ns respectively. Operates with a channel temperature up to 150°C and is rated for storage temperatures from -55°C to +150°C.

Suppliers

Company
Product
Description
Supplier Links
 - 2SK2632LS-MG5 - Rochester Electronics
Newburyport, MA, United States
2.5A, 800V, 4.8ohm, N-Channel Power MOSFET

2.5A, 800V, 4.8ohm, N-Channel Power MOSFET

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number 2SK2632LS-MG5
Polarity N-Channel
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