onsemi 2SD2203R

NPN silicon transistor for high-current switching applications, rated for 80 V collector-to-emitter voltage and 7 A continuous collector current, housed in a TO-220ML package with dimensions of 10.0 × 4.5 × 2.4 mm. Features low collector-to-emitter saturation voltage and micaless construction for easy mounting. Gain (hFE) is classified into grades (Q, R, S), with the R grade specifying hFE between 100 and 200 at VCE = -2 V and IC = -1 A. Operates with junction temperature up to 150 °C and storage temperature from -55 °C to 150 °C. Meets RoHS requirements.