onsemi 2SD1841P

NPN silicon transistor designed for high-current switching applications, with a collector-to-emitter voltage rating of 100 V and a continuous collector current of 25 A. It is packaged in a TO-3PB case and has a maximum junction temperature of 150 °C. The device exhibits a collector-to-emitter saturation voltage of 0.8 V at a collector current of 10 A and base current of 1 A. Current gain (hFE) ranges from 50 to 140 at a collector current of 2.5 A and collector-to-emitter voltage of 2 V. Absolute maximum ratings include a collector-to-base voltage of 110 V and a base current of 8 A. The transistor is intended for general electronics equipment and is not rated for medical, aerospace, or safety-critical applications.