onsemi 2SD1722S

Description
Power Bipolar Transistor, 5A, 50V, NPN, 3 Pin
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Description
Power Bipolar Transistor, 5A, 50V, NPN, 3 Pin
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Datasheet
Datasheet Summary
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NPN silicon transistor for switching applications, including relay drivers and high-speed inverters, in a TO-126LP package measuring 8.0 x 5.51 x 2.7 mm. It has a collector-to-emitter voltage rating of 50 V, continuous collector current of 5 A, and pulse collector current of 8 A. Collector dissipation is 20 W at Tc=25°C, with a maximum junction temperature of 150°C. Gain-bandwidth product is 180 MHz, and current gain (hFE) ranges from 140 to 280 for the S-rank variant. Switching times include a turn-on time of 50 ns, storage time of 500 ns, and fall time of 20 ns. It meets standard industrial reliability requirements but is not certified for life-support or high-reliability safety-critical systems.

Datasheet Summary
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NPN silicon transistor for switching applications, including relay drivers and high-speed inverters, in a TO-126LP package measuring 8.0 x 5.51 x 2.7 mm. It has a collector-to-emitter voltage rating of 50 V, continuous collector current of 5 A, and pulse collector current of 8 A. Collector dissipation is 20 W at Tc=25°C, with a maximum junction temperature of 150°C. Gain-bandwidth product is 180 MHz, and current gain (hFE) ranges from 140 to 280 for the S-rank variant. Switching times include a turn-on time of 50 ns, storage time of 500 ns, and fall time of 20 ns. It meets standard industrial reliability requirements but is not certified for life-support or high-reliability safety-critical systems.

Suppliers

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Supplier Links
 - 2SD1722S - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 5A, 50V, NPN, 3 Pin

Power Bipolar Transistor, 5A, 50V, NPN, 3 Pin

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number 2SD1722S
Package Type TO-126LP-3
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