onsemi TRANSISTORS - RF Transistors (BJT) - 2SC5226A-5-TL-E 2SC5226A-5-TL-E

Manufacturer: ON Semiconductor
Win Source Part Number: 132524-2SC5226A-5-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 12dB
Frequency - Transition: 7GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1dB @ 1GHz
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-MCP
Maximum Current Collector: 70mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 10V
Typical Gain (hFE) (Min): 135 @ 20mA, 5V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

RF Transistor NPN 10V 70mA 7GHz 150mW Surface Mount 3-MCP

RF Transistor NPN 10V 70mA 7GHz 150mW Surface Mount 3-MCP

NPN RF Transistor, 7GHz, 10V, 70mA, SOT-323 Product overview: 2SC5226A-5-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 7GHz, 10V, 70mA. Search-friendly keywords include transistor, BJT, switching, amplification, 7GHz, 10V, 70mA, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-2SC5226A-5-TL-E can be used for catalog matching and distributor lookup.