onsemi 2SC4107M

NPN silicon transistor for switching regulator applications, rated for 400 V collector-to-emitter voltage and 10 A continuous collector current, packaged in TO-220AB with 3 pins. It features a high breakdown voltage, high-speed switching, and wide safe operating area. The device has a maximum collector dissipation of 60 W at Tc=25°C, a junction temperature range of -55°C to 150°C, and meets the SANYO MBIT process specifications. Electrical characteristics include a minimum DC current gain of 20 to 40 for the M-rank hFE1 classification, collector-to-emitter saturation voltage of 0.8 V at IC=6 A, and a gain-bandwidth product of 20 MHz.