onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC4105M

Description

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Rochester Electronics
Shenzhen Shengyu Electronics Technology Limited

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Datasheet

Description

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Request a Quote

Email Supplier

Datasheet

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Company

Product

Description

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Rochester Electronics

Newburyport, MA, United States

2SC4105M

Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

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Datasheet

Shenzhen Shengyu Electronics Technology Limited

Futian, China

Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SC4105M

Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SC4105M

NPN SILICON TRANSISTOR

Supplier's Site

Technical Specifications

	Rochester Electronics	Shenzhen Shengyu Electronics Technology Limited
Product Category	Power MOSFET	Bipolar RF Transistors
Product Number	2SC4105M	2SC4105M
Product Name		Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type	CAN3/4

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