onsemi 2SC3786

NPN silicon transistor designed for inductive load switching applications such as motor and relay drivers, featuring an on-chip 60±10V Zener diode between collector and base. It is housed in a TO-126LP package with dimensions of 8.0 × 4.0 × 5.51 mm. The device has a collector-to-emitter voltage rating of 50 V, a continuous collector current of 3 A, and a peak pulse current of 6 A. DC current gain ranges from 1000 to 4000 at IC = 1.5 A, with a gain-bandwidth product of 180 MHz. Collector-to-emitter saturation voltage is specified up to 1.5 V. It supports an inductive load handling capability of 25 mJ with L = 100 mH. Junction temperature rating is 150⁠°C, and storage temperature ranges from -55⁠°C to +150⁠°C. The part meets no stated external standards.