onsemi 2SC3503E-RA

NPN silicon transistor for high-definition CRT video output, packaged in TO-126 with a 3-pin configuration. The device features a collector-to-emitter voltage rating of 300 V, a continuous collector current of 100 mA, and a pulse collector current of 200 mA. It has a collector dissipation of 1.2 W at 25°C and a junction temperature rating of 150°C. The transistor exhibits a gain-bandwidth product of 150 MHz, a reverse transfer capacitance of 1.8 pF, and a collector-to-base capacitance of 2.6 pF at 30 V. The hFE current gain for the E rank variant is specified as 100 to 200 at IC = -10 mA and VCE = -10 V. The part meets no specified industry standards beyond its electrical performance.