onsemi TRANSISTORS - Transistors (BJT) - Single - 2SB1202T-TL-E 2SB1202T-TL-E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 005818-2SB1202T-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 700mV @ 100mA, 2A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 200 @ 100mA, 2V Maximum Power Dissipation: 1W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 005818-2SB1202T-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 700mV @ 100mA, 2A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 200 @ 100mA, 2V Maximum Power Dissipation: 1W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2SB1202T-TL-E - 005818-2SB1202T-TL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SB1202T-TL-E
005818-2SB1202T-TL-E
TRANSISTORS - Transistors (BJT) - Single - 2SB1202T-TL-E 005818-2SB1202T-TL-E
Manufacturer: ON Semiconductor Win Source Part Number: 005818-2SB1202T-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 700mV @ 100mA, 2A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 200 @ 100mA, 2V Maximum Power Dissipation: 1W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 005818-2SB1202T-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 2-TP-FA
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 700mV @ 100mA, 2A
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 200 @ 100mA, 2V
Maximum Power Dissipation: 1W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
 - 2SB1202T-TL-E - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor

Power Bipolar Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB1202T-TL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SB1202T-TL-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SB1202T-TL-E
TRANS PNP 50V 3A TPFA

TRANS PNP 50V 3A TPFA

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SB1202T-TL-E
Bipolar Transistors - BJT 2SB1202T-TL-E
Bipolar Transistors - BJT LOW-SATURATION VOLTAGE

Bipolar Transistors - BJT LOW-SATURATION VOLTAGE

Buy Now Datasheet
Transistor, Pnp, -50V, -3A, To-252; Transistor Polarity Onsemi - 14AC5520 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Pnp, -50V, -3A, To-252; Transistor Polarity Onsemi
14AC5520
Transistor, Pnp, -50V, -3A, To-252; Transistor Polarity Onsemi 14AC5520
TRANSISTOR, PNP, -50V, -3A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:150MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:200hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, PNP, -50V, -3A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:150MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:200hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Power MOSFET Bipolar RF Transistors Bipolar RF Transistors Transistors
Product Number 005818-2SB1202T-TL-E 2SB1202T-TL-E 2SB1202T-TL-E 2SB1202T-TL-E 14AC5520
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SB1202T-TL-E Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT Transistor, Pnp, -50V, -3A, To-252; Transistor Polarity Onsemi
Polarity PNP; PNP PNP
Package Type SOT3; 2-TP-FA DPAK TP-FA TO-3
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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