onsemi TRANSISTORS - Transistors (BJT) - Single - 2SB1202T-TL-E 2SB1202T-TL-E

Description
Manufacturer: ON Semiconductor Win Source Part Number: 005818-2SB1202T-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 700mV @ 100mA, 2A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 200 @ 100mA, 2V Maximum Power Dissipation: 1W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors (BJT) - Single - 2SB1202T-TL-E - 005818-2SB1202T-TL-E - Win Source Electronics
    Win Source Electronics
  • 2SB1202T-TL-E - Rochester Electronics
    Rochester Electronics
  • Transistor, Pnp, -50V, -3A, To-252; Transistor Polarity Onsemi - 14AC5520 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB1202T-TL-E - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 005818-2SB1202T-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 700mV @ 100mA, 2A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 200 @ 100mA, 2V Maximum Power Dissipation: 1W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2SB1202T-TL-E - 005818-2SB1202T-TL-E - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SB1202T-TL-E
005818-2SB1202T-TL-E
TRANSISTORS - Transistors (BJT) - Single - 2SB1202T-TL-E 005818-2SB1202T-TL-E
Manufacturer: ON Semiconductor Win Source Part Number: 005818-2SB1202T-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 700mV @ 100mA, 2A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 200 @ 100mA, 2V Maximum Power Dissipation: 1W Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 005818-2SB1202T-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 2-TP-FA
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 700mV @ 100mA, 2A
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 200 @ 100mA, 2V
Maximum Power Dissipation: 1W
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
- 2SB1202T-TL-E - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
2SB1202T-TL-E
2SB1202T-TL-E
Power Bipolar Transistor

Power Bipolar Transistor

Supplier's Site Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore
-50V -3A DPAK Bipolar Transistor
276-2SB1202T-TL-E
-50V -3A DPAK Bipolar Transistor 276-2SB1202T-TL-E
Bipolar Transistor, -50V, -3A, Low VCE(sat) PNP Single TP/TP-FA hFE = 200-400, DPAK / TP-FA, 700-REEL Product overview: 2SB1202T-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -50V, -3A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, -50V, -3A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1202T-TL-E can be used for catalog matching and distributor lookup.

Bipolar Transistor, -50V, -3A, Low VCE(sat) PNP Single TP/TP-FA hFE = 200-400, DPAK / TP-FA, 700-REEL Product overview: 2SB1202T-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -50V, -3A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, -50V, -3A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1202T-TL-E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Transistor, Pnp, -50V, -3A, To-252; Transistor Polarity Onsemi - 14AC5520 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Transistor, Pnp, -50V, -3A, To-252; Transistor Polarity Onsemi
14AC5520
Transistor, Pnp, -50V, -3A, To-252; Transistor Polarity Onsemi 14AC5520
TRANSISTOR, PNP, -50V, -3A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:150MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:200hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, PNP, -50V, -3A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:150MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:200hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SB1202T-TL-E
Bipolar Transistors - BJT 2SB1202T-TL-E
Bipolar Transistors - BJT LOW-SATURATION VOLTAGE

Bipolar Transistors - BJT LOW-SATURATION VOLTAGE

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB1202T-TL-E - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SB1202T-TL-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SB1202T-TL-E
TRANS PNP 50V 3A TPFA

TRANS PNP 50V 3A TPFA

Supplier's Site

Technical Specifications

  Win Source Electronics Rochester Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Power MOSFET Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 005818-2SB1202T-TL-E 2SB1202T-TL-E 276-2SB1202T-TL-E 14AC5520 2SB1202T-TL-E 2SB1202T-TL-E
Product Name TRANSISTORS - Transistors (BJT) - Single - 2SB1202T-TL-E -50V -3A DPAK Bipolar Transistor Transistor, Pnp, -50V, -3A, To-252; Transistor Polarity Onsemi Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP PNP PNP
Package Type SOT3; 2-TP-FA DPAK TO-3 TP-FA
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 3000 milliamps 3000 milliamps
VCBO 60 volts
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