Power Bipolar Transistor
Manufacturer: ON Semiconductor
Win Source Part Number: 005817-2SB1202S-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 2-TP-FA
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 700mV @ 100mA, 2A
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 140 @ 100mA, 2V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Bipolar (BJT) Transistor PNP 50V 3A 150MHz 1W Surface Mount TP-FA
Bipolar Transistor, -50V, -3A, Low VCE(sat) PNP Single TP/TP-FA hFE = 140-280, DPAK / TP-FA, 700-REEL Product overview: 2SB1202S-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -50V, -3A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, -50V, -3A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1202S-TL-E can be used for catalog matching and distributor lookup.
TRANSISTOR, PNP, -50V, -3A, TO-252; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-50V; Transition Frequency ft:150MHz; Power Dissipation Pd:15W; DC Collector Current:-3A; DC Current Gain hFE:140hFE; Transistor Case RoHS Compliant: Yes
Bipolar Transistors - BJT HIGH-CURRENT SWITCHING
TRANS PNP 50V 3A TP-FA
| Rochester Electronics | Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 2SB1202S-TL-E | 005817-2SB1202S-TL-E | 488-2SB1202S-TL-ETR-ND | 276-2SB1202S-TL-E | 74AC6952 | 2SB1202S-TL-E | 2SB1202S-TL-E |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - 2SB1202S-TL-E | Single Bipolar Transistors | -50V -3A DPAK Bipolar Transistor | Transistor, Pnp, -50V, -3A, To-252; Transistor Polarity Onsemi | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Package Type | DPAK | SOT3; 2-TP-FA | TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-3 | |||
| Packing Method | Tape Reel; Tape & Reel | Tape Reel; Tape & Reel (TR),Cut Tape (CT) | |||||
| Polarity | PNP; PNP | PNP | PNP | PNP | |||
| IC(max) | 3000 milliamps | 3000 milliamps | |||||
| VCEO | 50 volts | 50 volts |