onsemi Single Bipolar Transistors 2SB1201T-TL-E

Description
Bipolar (BJT) Transistor PNP 50V 2A 150MHz 800mW Surface Mount TP-FA
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 50V 2A 150MHz 800mW Surface Mount TP-FA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - 2SB1201T-TL-EOSTR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SB1201T-TL-EOSTR-ND
Single Bipolar Transistors 2SB1201T-TL-EOSTR-ND
Bipolar (BJT) Transistor PNP 50V 2A 150MHz 800mW Surface Mount TP-FA

Bipolar (BJT) Transistor PNP 50V 2A 150MHz 800mW Surface Mount TP-FA

Buy Now Datasheet
Single Bipolar Transistors - 2SB1201T-TL-EOSCT-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SB1201T-TL-EOSCT-ND
Single Bipolar Transistors 2SB1201T-TL-EOSCT-ND
Bipolar (BJT) Transistor PNP 50V 2A 150MHz 800mW Surface Mount TP-FA

Bipolar (BJT) Transistor PNP 50V 2A 150MHz 800mW Surface Mount TP-FA

Buy Now Datasheet
Singapore
50V 2A DPAK Bipolar Transistor
276-2SB1201T-TL-E
50V 2A DPAK Bipolar Transistor 276-2SB1201T-TL-E
PNP BJT 50V 2A DPAK SMT Transistor Product overview: 2SB1201T-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 2A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 2A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1201T-TL-E can be used for catalog matching and distributor lookup.

PNP BJT 50V 2A DPAK SMT Transistor Product overview: 2SB1201T-TL-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 2A, DPAK. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 2A, DPAK, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SB1201T-TL-E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - 2SB1201T-TL-E - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor

Power Bipolar Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SB1201T-TL-E - 075422-2SB1201T-TL-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SB1201T-TL-E
075422-2SB1201T-TL-E
TRANSISTORS - Transistors (BJT) - Single - 2SB1201T-TL-E 075422-2SB1201T-TL-E
Manufacturer: ON Semiconductor Win Source Part Number: 075422-2SB1201T-TL-E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 2-TP-FA Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 700mV @ 50mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 200 @ 100mA, 2V Maximum Power Dissipation: 800mW Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 075422-2SB1201T-TL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 2-TP-FA
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 700mV @ 50mA, 1A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 100mA, 2V
Maximum Power Dissipation: 800mW
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SB1201T-TL-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SB1201T-TL-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SB1201T-TL-E
TRANS PNP 50V 2A TP-FA

TRANS PNP 50V 2A TP-FA

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SB1201T-TL-E
Bipolar Transistors - BJT 2SB1201T-TL-E
Bipolar Transistors - BJT BIP PNP 2A 50V

Bipolar Transistors - BJT BIP PNP 2A 50V

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Power MOSFET Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2SB1201T-TL-EOSTR-ND 276-2SB1201T-TL-E 2SB1201T-TL-E 075422-2SB1201T-TL-E 2SB1201T-TL-E 2SB1201T-TL-E
Product Name Single Bipolar Transistors 50V 2A DPAK Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - 2SB1201T-TL-E Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity PNP PNP; PNP
Package Type TO-252 (DPAK); TO-252-3, DPAK (2 Leads + Tab), SC-63 DPAK SOT3; 2-TP-FA
IC(max) 2000 milliamps 2000 milliamps
VCBO 60 volts
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