onsemi 2SB1134S

Description
Power Bipolar Transistor, 5A, 50V, PNP, TO-220AB, 3 Pin
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Description
Power Bipolar Transistor, 5A, 50V, PNP, TO-220AB, 3 Pin
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Datasheet
Datasheet Summary
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PNP silicon transistor for high-current switching applications, rated for 50 V collector-to-emitter voltage and 5 A continuous collector current, housed in a TO-220ML package with dimensions matching the SANYO TO-220ML format. Features a maximum collector-to-emitter saturation voltage of -0.4 V at -3 A collector current and -0.3 A base current, and a gain-bandwidth product of 30 MHz. The device is classified by hFE into ranks; the S-rank variant, corresponding to 2SB1134S, has a current gain range of 140 to 280 at -1 A collector current.

Datasheet Summary
Powered by GS/AI

PNP silicon transistor for high-current switching applications, rated for 50 V collector-to-emitter voltage and 5 A continuous collector current, housed in a TO-220ML package with dimensions matching the SANYO TO-220ML format. Features a maximum collector-to-emitter saturation voltage of -0.4 V at -3 A collector current and -0.3 A base current, and a gain-bandwidth product of 30 MHz. The device is classified by hFE into ranks; the S-rank variant, corresponding to 2SB1134S, has a current gain range of 140 to 280 at -1 A collector current.

Suppliers

Company
Product
Description
Supplier Links
 - 2SB1134S - Rochester Electronics
Newburyport, MA, United States
Power Bipolar Transistor, 5A, 50V, PNP, TO-220AB, 3 Pin

Power Bipolar Transistor, 5A, 50V, PNP, TO-220AB, 3 Pin

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Power MOSFET
Product Number 2SB1134S
Package Type TO-220; TO-220AB
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