onsemi Single Bipolar Transistors 2SA2169-E

Description
Bipolar (BJT) Transistor PNP 50V 10A 130MHz 950mW Through Hole TP
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Description
Bipolar (BJT) Transistor PNP 50V 10A 130MHz 950mW Through Hole TP
Request a Quote Datasheet

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Product
Description
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Single Bipolar Transistors - 2SA2169-EOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SA2169-EOS-ND
Single Bipolar Transistors 2SA2169-EOS-ND
Bipolar (BJT) Transistor PNP 50V 10A 130MHz 950mW Through Hole TP

Bipolar (BJT) Transistor PNP 50V 10A 130MHz 950mW Through Hole TP

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 958972-2SA2169-E - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
958972-2SA2169-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 958972-2SA2169-E
Win Source Part Number: 958972-2SA2169-E Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Bulk Standard Package: 500 Power - Max: 950 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 10 A Transistor Type: PNP Vce Saturation (Max) @ Ib, Ic: 580mV @ 250mA, 5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 130MHz Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Supplier Device Package: TP Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): 2SA2040-E; 2SB1204T-E; 2SA2039-E; KSB907TU2SA2169E; ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.21.0075 Mfr: onsemi Other Names: 2156-2SA2169-E,2SA21 69-EOS,ONSONS2SA2169 -E,2SA2169-E-ND Base Product Number: 2SA2169 Product Status: Obsolete

Win Source Part Number: 958972-2SA2169-E
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Bulk
Standard Package: 500
Power - Max: 950 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 10 A
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 580mV @ 250mA, 5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 130MHz
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TP
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): 2SA2040-E; 2SB1204T-E; 2SA2039-E; KSB907TU2SA2169E;
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: onsemi
Other Names: 2156-2SA2169-E,2SA2169-EOS,ONSONS2SA2169-E,2SA2169-E-ND
Base Product Number: 2SA2169
Product Status: Obsolete

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2SA2169-E
Bipolar Transistors - BJT 2SA2169-E
Bipolar Transistors - BJT BIP PNP 10A 50V

Bipolar Transistors - BJT BIP PNP 10A 50V

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SA2169-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SA2169-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SA2169-E
TRANS PNP 50V 10A TP

TRANS PNP 50V 10A TP

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 2SA2169-EOS-ND 958972-2SA2169-E 2SA2169-E 2SA2169-E
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3
IC(max) 10000 milliamps 10000 milliamps
Power Gain 200 dB
Operating Frequency 130 MHz
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