onsemi 2SA1520-TB-E

PNP epitaxial planar silicon transistor with on-chip bias resistors R1=2.2kΩ and R2=10kΩ, designed for switching applications in compact CP package. Features collector-to-base and collector-to-emitter voltage ratings of -50V, collector current of -500mA, and power dissipation of 200mW. Junction temperature rating is 150°C. Includes gain-bandwidth product of 250MHz and output capacitance of 3.7pF. Marked as NL. Complies with standard semiconductor reliability practices but no explicit external certifications are stated.