onsemi 50V 150mA SOT-23 Bipolar Transistor 2SA1179N6-TB-E

Description
Small Signal Bipolar Transistor
Request a Quote Datasheet
Description
Small Signal Bipolar Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 2SA1179N6-TB-E - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor

Small Signal Bipolar Transistor

Supplier's Site Datasheet
Singapore, Singapore
50V 150mA SOT-23 Bipolar Transistor
276-2SA1179N6-TB-E
50V 150mA SOT-23 Bipolar Transistor 276-2SA1179N6-TB-E
Bipolar Transistor, (-)50V, (-)150mA, Low VCE(sat), (PNP)NPN Single CPA, SOT-23 / CPA, 3000-REEL Product overview: 2SA1179N6-TB-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 150mA, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 150mA, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1179N6-TB-E can be used for catalog matching and distributor lookup.

Bipolar Transistor, (-)50V, (-)150mA, Low VCE(sat), (PNP)NPN Single CPA, SOT-23 / CPA, 3000-REEL Product overview: 2SA1179N6-TB-E from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, 150mA, SOT-23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, 150mA, SOT-23, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2SA1179N6-TB-E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2SA1179N6-TB-E - 098333-2SA1179N6-TB-E - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2SA1179N6-TB-E
098333-2SA1179N6-TB-E
TRANSISTORS - Transistors (BJT) - Single - 2SA1179N6-TB-E 098333-2SA1179N6-TB-E
Manufacturer: ON Semiconductor Win Source Part Number: 098333-2SA1179N6-TB- E Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 180MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 3-CP Maximum Current Collector: 150mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 500mV @ 5mA, 50mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 135 @ 1mA, 6V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Sufficient

Manufacturer: ON Semiconductor
Win Source Part Number: 098333-2SA1179N6-TB-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 180MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: 3-CP
Maximum Current Collector: 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 500mV @ 5mA, 50mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 135 @ 1mA, 6V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single Bipolar Transistors - 2SA1179N6-TB-E-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2SA1179N6-TB-E-ND
Single Bipolar Transistors 2SA1179N6-TB-E-ND
Bipolar (BJT) Transistor PNP 50V 150mA 180MHz 200mW Surface Mount 3-CP

Bipolar (BJT) Transistor PNP 50V 150mA 180MHz 200mW Surface Mount 3-CP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2SA1179N6-TB-E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2SA1179N6-TB-E
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2SA1179N6-TB-E
TRANS PNP 50V 0.15A 3CP

TRANS PNP 50V 0.15A 3CP

Supplier's Site
TRANS PNP 50V 0.15A CP - 598-2SA1179N6-TB-E - Utmel Electronic Limited
Hong Kong, China
TRANS PNP 50V 0.15A CP
598-2SA1179N6-TB-E
TRANS PNP 50V 0.15A CP 598-2SA1179N6-TB-E
TRANS PNP 50V 0.15A CP

TRANS PNP 50V 0.15A CP

Supplier's Site

Technical Specifications

  Rochester Electronics ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Transistors
Product Number 2SA1179N6-TB-E 276-2SA1179N6-TB-E 098333-2SA1179N6-TB-E 2SA1179N6-TB-E-ND 2SA1179N6-TB-E 598-2SA1179N6-TB-E
Product Name 50V 150mA SOT-23 Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - 2SA1179N6-TB-E Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) TRANS PNP 50V 0.15A CP
Package Type SOP8 SOT3; 3-CP SOT23; TO-236-3, SC-59, SOT-23-3
Polarity PNP PNP; PNP PNP PNP
IC(max) 150 milliamps 150 milliamps
VCEO 50 volts 50 volts
VCBO -55 volts
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