Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 005715-2N7000TA
Packaging: AMMO PACKAGE
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 200mA (Tc)
Gate-Source Threshold Voltage: 3V @ 1mA
Max Input Capacitance: 50pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 Ohm @ 500mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Quantity per package: 2k pcs
N-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3
N-Channel 60V 200mA (Tc) 400mW (Ta) Through Hole TO-92-3
MOSFETs 60V N-Channel Sm Sig Product overview: 2N7000TA from Fairchild (onsemi) is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 60V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-2N7000TA can be used for catalog matching and distributor lookup.
60V 200mA 400mW 5Ω@10V,500mA 3V@1mA N Channel TO-92-2.54mm MOSFETs ROHS
MOSFET, N-CH, 60V, 0.2A, 150DEG C, 0.4W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:200mA; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.9V RoHS Compliant: Yes
MOSFET N-CH 60V 200MA TO92-3
MOSFET N-CH 60V 200MA TO92-3
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | LCSC Electronics Technology (HK) Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 005715-2N7000TA | 2N7000TACT-ND | 2088-2N7000TA | 2N7000TA | 31Y5851 | 2N7000TA | 2N7000TA |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2N7000TA | Single FETs, MOSFETs | N-Channel 60V MOSFET Transistor | Triode/MOS Tube/Transistor >> MOSFETs | Mosfet, N-Ch, 60V, 0.2A, 150Deg C, 0.4W; Channel Type Onsemi | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| PD | 400 milliwatts | 400 milliwatts | 400 milliwatts | 400 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | TO-92; SOT3; TO-92-3 | TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads | Ammo Pack | TO-92 | TO-3 | TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
