onsemi Single Bipolar Transistors 2N6491

Description
Bipolar (BJT) Transistor PNP 80V 15A 5MHz 1.8W Through Hole TO-220
  • Single Bipolar Transistors - 2N6491OS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - 2N6491 - 153118-2N6491 - Win Source Electronics
    Win Source Electronics
  • 2N6491 - Rochester Electronics
    Rochester Electronics
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Description
Bipolar (BJT) Transistor PNP 80V 15A 5MHz 1.8W Through Hole TO-220
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - 2N6491OS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N6491OS-ND
Single Bipolar Transistors 2N6491OS-ND
Bipolar (BJT) Transistor PNP 80V 15A 5MHz 1.8W Through Hole TO-220

Bipolar (BJT) Transistor PNP 80V 15A 5MHz 1.8W Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - 2N6491 - 153118-2N6491 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N6491
153118-2N6491
TRANSISTORS - Transistors (BJT) - Single - 2N6491 153118-2N6491
Manufacturer: ON Semiconductor Win Source Part Number: 153118-2N6491 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 5MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 15A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 3.5V @ 5A, 15A Collector Cut-off Current(Max): 1mA Typical Gain (hFE) (Min): 20 @ 5A, 4V Maximum Power Dissipation: 1.8W Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 153118-2N6491
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 5MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 15A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 3.5V @ 5A, 15A
Collector Cut-off Current(Max): 1mA
Typical Gain (hFE) (Min): 20 @ 5A, 4V
Maximum Power Dissipation: 1.8W
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
- 2N6491 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
2N6491
2N6491
Power Bipolar Transistor, 15A, 80V, PNP

Power Bipolar Transistor, 15A, 80V, PNP

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics
Product Category Transistors Transistors Power MOSFET
Product Number 2N6491OS-ND 153118-2N6491 2N6491
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - 2N6491
Polarity PNP PNP; PNP
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