onsemi TRANSISTORS - Transistors (BJT) - Single - 2N6491 2N6491

Description
Manufacturer: ON Semiconductor Win Source Part Number: 153118-2N6491 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 5MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 15A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 3.5V @ 5A, 15A Collector Cut-off Current(Max): 1mA Typical Gain (hFE) (Min): 20 @ 5A, 4V Maximum Power Dissipation: 1.8W Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors (BJT) - Single - 2N6491 - 153118-2N6491 - Win Source Electronics
    Win Source Electronics
  • 2N6491 - Rochester Electronics
    Rochester Electronics
  • Single Bipolar Transistors - 2N6491OS-ND - DigiKey
    DigiKey
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Description
Manufacturer: ON Semiconductor Win Source Part Number: 153118-2N6491 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 5MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 15A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 3.5V @ 5A, 15A Collector Cut-off Current(Max): 1mA Typical Gain (hFE) (Min): 20 @ 5A, 4V Maximum Power Dissipation: 1.8W Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N6491 - 153118-2N6491 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N6491
153118-2N6491
TRANSISTORS - Transistors (BJT) - Single - 2N6491 153118-2N6491
Manufacturer: ON Semiconductor Win Source Part Number: 153118-2N6491 Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 5MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 15A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 3.5V @ 5A, 15A Collector Cut-off Current(Max): 1mA Typical Gain (hFE) (Min): 20 @ 5A, 4V Maximum Power Dissipation: 1.8W Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 153118-2N6491
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 5MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 15A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 3.5V @ 5A, 15A
Collector Cut-off Current(Max): 1mA
Typical Gain (hFE) (Min): 20 @ 5A, 4V
Maximum Power Dissipation: 1.8W
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
- 2N6491 - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
2N6491
2N6491
Power Bipolar Transistor, 15A, 80V, PNP

Power Bipolar Transistor, 15A, 80V, PNP

Supplier's Site Datasheet
Single Bipolar Transistors - 2N6491OS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N6491OS-ND
Single Bipolar Transistors 2N6491OS-ND
Bipolar (BJT) Transistor PNP 80V 15A 5MHz 1.8W Through Hole TO-220

Bipolar (BJT) Transistor PNP 80V 15A 5MHz 1.8W Through Hole TO-220

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Technical Specifications

  Win Source Electronics Rochester Electronics DigiKey
Product Category Transistors Power MOSFET Transistors
Product Number 153118-2N6491 2N6491 2N6491OS-ND
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N6491 Single Bipolar Transistors
Polarity PNP; PNP PNP
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