onsemi TRANSISTORS - Transistors (BJT) - Single - 2N6426RLRAG 2N6426RLRAG

Manufacturer: ON Semiconductor
Win Source Part Number: 1004019-2N6426RLRAG
Packaging: Reel - TR
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 500mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 40V
Max Vce (sat): 1.5V @ 500μA, 500mA
Collector Cut-off Current(Max): 1μA
Typical Gain (hFE) (Min): 30000 @ 100mA, 5V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Sufficient

NPN BJT 40V 500mA TO-92 Darlington Transistor Product overview: 2N6426RLRAG from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 500mA. Search-friendly keywords include transistor, BJT, switching, amplification, 40V, 500mA, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N6426RLRAG can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor NPN - Darlington 40V 500mA 625mW Through Hole TO-92 (TO-226)