onsemi TRANSISTORS - Transistors (BJT) - Single - 2N6111G 2N6111G

Description
Manufacturer: ON Semiconductor Win Source Part Number: 117099-2N6111G Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 10MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 7A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 3.5V @ 3A, 7A Collector Cut-off Current(Max): 1mA Typical Gain (hFE) (Min): 30 @ 3A, 4V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
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  • Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220AB Rail - 598-2N6111G - Utmel Electronic Limited
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Request a Quote Datasheet
Description
Manufacturer: ON Semiconductor Win Source Part Number: 117099-2N6111G Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 10MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 7A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 3.5V @ 3A, 7A Collector Cut-off Current(Max): 1mA Typical Gain (hFE) (Min): 30 @ 3A, 4V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single - 2N6111G - 117099-2N6111G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - 2N6111G
117099-2N6111G
TRANSISTORS - Transistors (BJT) - Single - 2N6111G 117099-2N6111G
Manufacturer: ON Semiconductor Win Source Part Number: 117099-2N6111G Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 10MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-220AB Maximum Current Collector: 7A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 3.5V @ 3A, 7A Collector Cut-off Current(Max): 1mA Typical Gain (hFE) (Min): 30 @ 3A, 4V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Balance

Manufacturer: ON Semiconductor
Win Source Part Number: 117099-2N6111G
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 10MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-220AB
Maximum Current Collector: 7A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 3.5V @ 3A, 7A
Collector Cut-off Current(Max): 1mA
Typical Gain (hFE) (Min): 30 @ 3A, 4V
Maximum Power Dissipation: 40W
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single Bipolar Transistors - 2N6111GOS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N6111GOS-ND
Single Bipolar Transistors 2N6111GOS-ND
Bipolar (BJT) Transistor PNP 30V 7A 10MHz 40W Through Hole TO-220

Bipolar (BJT) Transistor PNP 30V 7A 10MHz 40W Through Hole TO-220

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
2N6111G
Bipolar Transistors - BJT 2N6111G
Bipolar Transistors - BJT 7A 30V 40W PNP

Bipolar Transistors - BJT 7A 30V 40W PNP

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - 2N6111G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
2N6111G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) 2N6111G
TRANS PNP 30V 7A TO220

TRANS PNP 30V 7A TO220

Supplier's Site
Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220AB Rail - 598-2N6111G - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220AB Rail
598-2N6111G
Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220AB Rail 598-2N6111G
Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220AB Rail

Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220AB Rail

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 117099-2N6111G 2N6111GOS-ND 2N6111G 2N6111G 598-2N6111G
Product Name TRANSISTORS - Transistors (BJT) - Single - 2N6111G Single Bipolar Transistors Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT) Trans GP BJT PNP 30V 7A 3-Pin(3+Tab) TO-220AB Rail
Polarity PNP; PNP PNP PNP; PNP
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3
Packing Method Tube; Tube Tube; Tube
IC(max) 7000 milliamps 7000 milliamps
VCEO 30 volts 30 volts
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