The 2N5550G is an NPN silicon bipolar transistor in a TO-92 package, designed for general-purpose amplification. It has a collector-emitter voltage rating of 140 V, a continuous collector current of 600 mA, and a total device dissipation of 625 mW at 25°C. The device features a current gain bandwidth product of 300 MHz and a minimum DC current gain of 60 at 1 mA collector current and 5 V collector-emitter voltage. It operates with a junction temperature range of -55°C to +150°C and meets RoHS compliance. Thermal resistance from junction to ambient is 200 °C/W.
Bipolar (BJT) Single Transistor, GENERAL PURPOSE, NPN, 140 V, 300 MHz, 625 mW, 600 mA, 60 RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 72T2760 |
| Product Name | Bipolar (Bjt) Single Transistor, General Purpose, Npn, 140 V, 300 Mhz, 625 Mw, 600 Ma, 60 Rohs Compliant Onsemi |
| Polarity | NPN |
