onsemi TRANSISTORS - Transistors (BJT) - Single - 2N5401RLRAG 2N5401RLRAG

Manufacturer: ON Semiconductor
Win Source Part Number: 114489-2N5401RLRAG
Packaging: Reel - TR
Mounting: Through Hole
Frequency - Transition: 300MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 150V
Max Vce (sat): 500mV @ 5mA, 50mA
Collector Cut-off Current(Max): 50nA (ICBO)
Typical Gain (hFE) (Min): 60 @ 10mA, 5V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Application Field: Used in Audio

High Current PNP Bipolar Transistor, TO-92 150 V, 0.1 A, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL Product overview: 2N5401RLRAG from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 150 V, 0.1 A. Search-friendly keywords include transistor, BJT, switching, amplification, 150 V, 0.1 A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-2N5401RLRAG can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor PNP 150V 600mA 300MHz 625mW Through Hole TO-92 (TO-226)