onsemi Single Bipolar Transistors 2N5401

2N5401 is a PNP bipolar junction transistor for amplification applications, housed in a TO-92 3-pin package. It has a collector-emitter voltage rating of -150 V, a maximum collector current of -600 mA, and a power dissipation of 625 mW. The DC current gain (hFE) ranges from 30 to 240 depending on operating conditions. The current gain bandwidth product is 100 to 400 MHz, and the collector-emitter saturation voltage is -0.2 V at -10 mA collector current and -1 mA base current. Thermal resistance from junction to ambient is 200 °C/W. The operating and storage junction temperature range is -55 °C to 150 °C.