onsemi JFETs (Junction Field Effect) - 2N5247 2N5247

Description
Manufacturer: ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1036404-2N5247 Packaging: Bulk Voltage Rating: 30 V Current Rating: 24 mA Length: 5.2 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 15 V Frequency: 400 MHz Power Dissipation: 350 mW Height: 5.33 mm Weight: 200.998119 mg Noise Figure: 4 dB Number of Pins: 3 Width: 4.19 mm Categories: JFETs(Junction Field Effect) Case / Package: TO-92 Alternative Parts (Cross-Reference): 2N5950; BF256B; J175_D26Z; TIS742N5247.; Popularity: Low Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Shortage Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Voltage Rating (DC): 8 V Element Configuration: Single Max Power Dissipation: 350 mW Breakdown Voltage: -30 V Continuous Drain Current (ID): 15 mA Gate to Source Voltage (Vgs): 8 V
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Description
Manufacturer: ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1036404-2N5247 Packaging: Bulk Voltage Rating: 30 V Current Rating: 24 mA Length: 5.2 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 15 V Frequency: 400 MHz Power Dissipation: 350 mW Height: 5.33 mm Weight: 200.998119 mg Noise Figure: 4 dB Number of Pins: 3 Width: 4.19 mm Categories: JFETs(Junction Field Effect) Case / Package: TO-92 Alternative Parts (Cross-Reference): 2N5950; BF256B; J175_D26Z; TIS742N5247.; Popularity: Low Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Shortage Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Voltage Rating (DC): 8 V Element Configuration: Single Max Power Dissipation: 350 mW Breakdown Voltage: -30 V Continuous Drain Current (ID): 15 mA Gate to Source Voltage (Vgs): 8 V
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Suppliers

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Product
Description
Supplier Links
JFETs (Junction Field Effect) - 2N5247 - 1036404-2N5247 - Win Source Electronics
Laguna Hills, CA, United States
JFETs (Junction Field Effect) - 2N5247
1036404-2N5247
JFETs (Junction Field Effect) - 2N5247 1036404-2N5247
Manufacturer: ON Semiconductor Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1036404-2N5247 Packaging: Bulk Voltage Rating: 30 V Current Rating: 24 mA Length: 5.2 mm Mounting: SMD (SMT) Drain to Source Voltage (Vdss): 15 V Frequency: 400 MHz Power Dissipation: 350 mW Height: 5.33 mm Weight: 200.998119 mg Noise Figure: 4 dB Number of Pins: 3 Width: 4.19 mm Categories: JFETs(Junction Field Effect) Case / Package: TO-92 Alternative Parts (Cross-Reference): 2N5950; BF256B; J175_D26Z; TIS742N5247.; Popularity: Low Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Shortage Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Voltage Rating (DC): 8 V Element Configuration: Single Max Power Dissipation: 350 mW Breakdown Voltage: -30 V Continuous Drain Current (ID): 15 mA Gate to Source Voltage (Vgs): 8 V

Manufacturer: ON Semiconductor
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1036404-2N5247
Packaging: Bulk
Voltage Rating: 30 V
Current Rating: 24 mA
Length: 5.2 mm
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 15 V
Frequency: 400 MHz
Power Dissipation: 350 mW
Height: 5.33 mm
Weight: 200.998119 mg
Noise Figure: 4 dB
Number of Pins: 3
Width: 4.19 mm
Categories: JFETs(Junction Field Effect)
Case / Package: TO-92
Alternative Parts (Cross-Reference): 2N5950; BF256B; J175_D26Z; TIS742N5247.;
Popularity: Low
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Shortage
Lead Free: Yes
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Voltage Rating (DC): 8 V
Element Configuration: Single
Max Power Dissipation: 350 mW
Breakdown Voltage: -30 V
Continuous Drain Current (ID): 15 mA
Gate to Source Voltage (Vgs): 8 V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2N5247 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2N5247
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2N5247
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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors
Product Number 1036404-2N5247 2N5247
Product Name JFETs (Junction Field Effect) - 2N5247 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Type JFET
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