onsemi Single Bipolar Transistors 2N4923

Description
Bipolar (BJT) Transistor NPN 80V 1A 3MHz 30W Through Hole TO-126
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Description
Bipolar (BJT) Transistor NPN 80V 1A 3MHz 30W Through Hole TO-126
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Datasheet
Datasheet Summary
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The 2N4923G is an NPN silicon transistor in a TO-225 package, designed for driver, switching, and amplifier applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 1.0 A, and a maximum power dissipation of 30 W at 25°C. The device features a collector-emitter saturation voltage of up to 0.6 V at 1.0 A collector current and 0.1 A base current, and a current-gain bandwidth product of 3.0 MHz. The thermal resistance from junction to case is 4.16°C/W, and the operating and storage junction temperature range is from -65°C to +150°C. The device is RoHS compliant and Pb-Free.

Datasheet Summary
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The 2N4923G is an NPN silicon transistor in a TO-225 package, designed for driver, switching, and amplifier applications. It has a collector-emitter voltage rating of 80 V, a continuous collector current of 1.0 A, and a maximum power dissipation of 30 W at 25°C. The device features a collector-emitter saturation voltage of up to 0.6 V at 1.0 A collector current and 0.1 A base current, and a current-gain bandwidth product of 3.0 MHz. The thermal resistance from junction to case is 4.16°C/W, and the operating and storage junction temperature range is from -65°C to +150°C. The device is RoHS compliant and Pb-Free.

Suppliers

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Single Bipolar Transistors - 2N4923OS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
2N4923OS-ND
Single Bipolar Transistors 2N4923OS-ND
Bipolar (BJT) Transistor NPN 80V 1A 3MHz 30W Through Hole TO-126

Bipolar (BJT) Transistor NPN 80V 1A 3MHz 30W Through Hole TO-126

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 2N4923OS-ND
Product Name Single Bipolar Transistors
Polarity NPN
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