The 2N3055G is an NPN silicon power transistor in a TO-204AA (TO-3) package, designed for general-purpose switching and amplifier applications. It has a maximum collector-emitter voltage of 60 Vdc, a continuous collector current of 15 Adc, and a total power dissipation of 115 W at a case temperature of 25°C. The device features a DC current gain of 20-70 at 4 Adc collector current and a collector-emitter saturation voltage of 1.1 Vmax at the same current. It is Pb-free and meets RoHS compliance. The thermal resistance from junction to case is 1.52 °C/W. Operating and storage junction temperature ranges from -65°C to +200°C.
BIPOLAR TRANSISTOR, NPN, 60V TO-204; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:15A; Power Dissipation:115W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:-; MSL:- RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 26AC6350 |
| Product Name | Bipolar Transistor, Npn, 60V To-204; Transistor Polarity Onsemi |
| Polarity | NPN |
